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BFS505,115 15V RF Power Transistor , 18mA 9GHz 150mW Surface Mount Transistor

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BFS505,115 15V RF Power Transistor , 18mA 9GHz 150mW Surface Mount Transistor

Model Number : BFS505

Place of Origin : CHINA

MOQ : 3000 PCS

Price : Negotiation

Payment Terms : T/T, Western Union ， ESCROW

Supply Ability : 60000PCS

Delivery Time : STOCK

Packaging Details : 3000PCS/REEL

Description : RF Transistor NPN 15V 18mA 9GHz 150mW Surface Mount SC-70

Categories : Transistors - Bipolar (BJT) - RF

Voltage - Collector Emitter Breakdown (Max) : 15V

Frequency - Transition : 9GHz

Noise Figure (dB Typ @ f) : 1.2dB ~ 2.1dB @ 900MHz

Power - Max : 150mW

DC Current Gain (hFE) (Min) @ Ic, Vce : 60 @ 5mA, 6V

Current - Collector (Ic) (Max) : 18mA

Operating Temperature : 175°C (TJ)

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BFS505 NPN PNP Transistors RF Transistor NPN 15V 18mA 9GHz 150mW Surface Mount

NPN 9 GHz wideband transistor

FEATURES

• Low current consumption

• High power gain

• Low noise figure

• High transition frequency

• Gold metallization ensures

excellent reliability

• SOT323 envelope.

DESCRIPTION

NPN transistor in a plastic SOT323

envelope.

It is intended for low power amplifiers,

oscillators and mixers particularly in

RF portable communication

equipment (cellular phones, cordless

phones, pagers) up to 2 GHz.

Product Attributes	Select All
Categories	Discrete Semiconductor Products
	Transistors - Bipolar (BJT) - RF
Manufacturer	USA Inc.
Series	-
Packaging	Tape & Reel (TR)
Part Status	Obsolete
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	15V
Frequency - Transition	9GHz
Noise Figure (dB Typ @ f)	1.2dB ~ 2.1dB @ 900MHz
Gain	-
Power - Max	150mW
DC Current Gain (hFE) (Min) @ Ic, Vce	60 @ 5mA, 6V
Current - Collector (Ic) (Max)	18mA
Operating Temperature	175°C (TJ)
Mounting Type	Surface Mount
Package / Case	SC-70, SOT-323
Supplier Device Package	SOT-323-3

Product Tags:

resistor equipped transistor

silicon npn power transistors

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