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GBJ1508 Rectifier Diode Single - Phase Glass Passivated Bridge Rectifier

ChongMing Group (HK) Int'l Co., Ltd
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GBJ1508 Rectifier Diode Single - Phase Glass Passivated Bridge Rectifier

Model Number : GBJ1508

Certification : new & original

Place of Origin : original factory

MOQ : 10pcs

Price : Negotiate

Payment Terms : T/T, Western Union, Paypal

Supply Ability : 7500pcs

Delivery Time : 1 day

Packaging Details : Please contact me for details

Description : Bridge Rectifier Single Phase Standard 800 V Through Hole GBJ

Peak Repetitive Reverse Voltage : 800 V

Working Peak Reverse Voltage : 800 V

DC Blocking Voltage : 800 V

RMS Reverse Voltage : 560 V

Typical Junction Capacitance per Element : 60 pF

Operating and Storage Temperature : -65 to +150 °C

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GBJ1508 Rectifier Diode Single - Phase Glass Passivated Bridge Rectifier

Features 

  • Glass Passivated Die Construction 
  • High Case Dielectric StreCM GROUPh of 1500VRMS 
  • Low Reverse Leakage Current 
  • Surge Overload Rating to 240A Peak 
  • Ideal for Printed Circuit Board Applications 
  • Plastic Material - UL Flammability Classification 94V-0 
  • UL Listed Under Recognized Component Index, File Number E94661

Mechanical Data

  • Case: Molded Plastic 
  • Terminals: Plated Leads, Solderable per MIL-STD-202, Method 208 
  • Polarity: Molded on Body 
  • Mounting: Through Hole for #6 Screw 
  • Mounting Torque: 5.0 in-lbs Maximum 
  • Weight: 6.6 grams (approx) 
  • Marking: Type Number

Maximum Ratings and Electrical Characteristics @ TA = 25°C unless otherwise specified

Single phase, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Characteristic Symbol Value Unit
Average Forward Rectified Output Current @ TC = 100°C IO 15 A
Non-Repetitive Peak Forward Surge Current, 8.3 ms single half-sine-wave superimposed on rated load (JEDEC method) IFSM 240 A
Forward Voltage (per element) @ IF = 7.5A DC VFM 1.05 V

Peak Reverse Current @ TC = 25°C

at Rated DC Blocking Voltage @ TC = 125°C

IR

10

500

µA
I2t Rating for Fusing (t < 8.3ms) (Note 1) I 2t 240 A2s
Typical Junction Capacitance per Element (Note 2) Cj 60 pF
Typical Thermal Resistance, Junction to Case (Note 3) RθJC 0.8 °C/W
Operating and Storage Temperature Range Tj, TSTG -65 to +150 °C

Notes:

1. Non-repetitive, for t > 1ms and < 8.3 ms.

2. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.

3. Thermal resistance from junction to case per element. Unit mounted on 300 x 300 x 1.6mm copper plate heat sink.

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