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PNP / NPN Epitaxial Planar silicon power transistors 2SC5707 for High Current Switching

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ChongMing Group (HK) Int'l Co., Ltd

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Model Number : 2SC5707

Certification : new & original

Place of Origin : original factory

MOQ : 20

Price : Negotiate

Payment Terms : T/T, Western Union,Paypal

Supply Ability : 9500

Delivery Time : 1 day

Packaging Details : Please contact me for details

Description : Bipolar (BJT) Transistor NPN 50 V 8 A 330MHz 1 W Surface Mount TP-FA

Collector Cutoff Current : <= (--)0.1 µA

Emitter Cutoff Current : <= (--)0.1 µA

DC Current Gain : 200-560

Gain-Bandwidth Product : (290)330 MHz

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PNP / NPN Epitaxial Planar silicon power transistors 2SC5707 for High Current Switching

Applications

• DC / DC converter, relay drivers, lamp drivers, motor drivers, flash

Features

• Adoption of FBET and MBIT processes.

• Large current capacitance.

• Low collector-to-emitter saturation voltage.

• High-speed switching.

• High allowable power dissipation.

Specifications ( ) : 2SA2040

**Absolute Maximum Ratings** at Ta=25°C
Parameter	Symbol	Conditions	Ratings	Unit
Collector-to-Base Voltage	V_CBO	--	(--50)100	V
Collector-to-Emitter Voltage	V_CES	--	(--50)100	V
Collector-to-Emitter Voltage	V_CEO	--	(--)50	V
Emitter-to-Base Voltage	V_EBO	--	(--)6	V
Collector Current	I_C	--	(--)8	A
Collector Current (Pulse)	I_CP	--	(--)11	A
Base Current	I_B	--	(--)2	A
Collector Dissipation	P_C	-- Tc=25°C	1.0 15	W W
Junction Temperature	T_j	--	150	°C
Storage Temperature	T_stg	--	--55 to +150	°C

**Electrical Characteristics** at Ta=25°C
Parameter	Symbol	Conditions	min.	Typ.	max.	unit
Collector Cutoff Current	I_CBO	V_CB=(--)40V, I_E=0A	--	--	(--)0.1	µA
Emitter Cutoff Current	I_EBO	V_EB=(--)4V, I_C=0A	--	--	(--)0.1	µA
DC Current Gain	h_FE	V_CE=(--)2V, I_C=(--)500mA	200	--	560	--
Gain-Bandwidth Product	f_T	V_CE=(--)10V, I_C=(--)500mA	--	(290)330	--	MHz
Output Capacitance	Cob	V_CB=(--)10V, f=1MHz	--	(50)28	--	pF
Collector-to-Emitter Saturation Voltage	V_CE(sat)1 V_CE(sat)2	I_C=(--)3.5A, I_B=(--)175mA I_C=(--)2A, I_B=(--)40mA	-- --	(--230)160 (--240)110	(--390)240 (--400)170	mV mV
Base-to-Emitterr Saturation Voltage	V_BE(sat)	I_C=(--)2A, I_B=(--)40mA	--	(--)0.83	(--)1.2	V
Collector-to-Base Breakdown Voltage	V_(BR)CBO	I_C=(--)10µA, I_E=0A	(--50)100	--	--	V
Collector-to-Emitter Breakdown Voltage	V_(BR)CES	I_C=(--)100µA, R_BE=0Ω	(--50)100	--	--	V
Collector-to-Emitter Breakdown Voltage	V_(BR)CEO	I_C=(--)1mA, R_BE=∞	(--)50	--	--	V
Emitter-to-Base Breakdown Voltage	V_(BR)EBO	I_E=(--)10µA, I_C=0A	(--)6	--	--	V
Turn-On Time	t_on	See specified Test Circuit.	--	(40)30	--	ns
Storage Time	t_stg	See specified Test Circuit.	--	(225)420	--	ns
Fall Time	t_f	See specified Test Circuit.	--	25	--	ns

Package Dimensions Package Dimensions

unit : mm unit : mm

7518-003 7003-003

Switching Time Test Circuit

Product Tags:

power mosfet ic

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