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Brand Name : IRF
Model Number : IRF7329
Certification : Original Factory Pack
Place of Origin : Thailand
MOQ : 5pcs
Price : Negotiation
Payment Terms : T/T, Western Union,PayPal
Supply Ability : 290PCS
Delivery Time : 1 Day
Packaging Details : please contact me for details
Description : Mosfet Array 12V 9.2A 2W Surface Mount 8-SO
Drain- Source Voltage : -12 V
Continuous Drain Current, VGS @ -4.5V : -7.4 A
Pulsed Drain Current : -37 A
Power Dissipation : 2.0 W
Linear Derating Factor : 16 mW/°C
HEXFET Power Mosfet Transistor , power mosfet module IRF7329
Trench Technology
Ultra Low On-Resistance
Dual P-Channel MOSFET
Low Profile (<1.8mm)
Available in Tape & Reel
Lead-Free
Description
New P-Channel HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infrared, or wave soldering technique
Parameter | Max. | Units | |
VDS | Drain- Source Voltage | -12 | V |
ID @ TA = 25°C | Continuous Drain Current, VGS @ -4.5V | -9.2 | A |
ID @ TA= 70°C | Continuous Drain Current, VGS @ -4.5V -7.4 | -7.4 | |
IDM | Pulsed Drain Current | -37 | |
PD @TA = 25°C | Power Dissipation | 2.0 | W |
PD @TA = 70°C | Power Dissipation | 1.3 | |
Linear Derating Factor | 16 | mW/°C | |
VGS | Gate-to-Source Voltage | ± 8.0 | V |
TJ, TSTG | Junction and Storage Temperature Range | -55 to + 150 | °C |
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HEXFET Power Mosfet Transistor , power mosfet module IRF7329TRPBF Images |