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STD4NK60ZT4 power mosfet module Power Mosfet Transistor TRANSISTOR | MOSFET | N-CHANNEL | TO-252AA

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ChongMing Group (HK) Int'l Co., Ltd

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STD4NK60ZT4 power mosfet module Power Mosfet Transistor TRANSISTOR | MOSFET | N-CHANNEL | TO-252AA

Model Number : STD4NK60ZT4

Certification : new & original

Place of Origin : original factory

MOQ : 10pcs

Price : Negotiate

Payment Terms : T/T, Western Union, Paypal

Supply Ability : 8700pcs

Delivery Time : 1 day

Packaging Details : Please contact me for details

Description : N-Channel 600 V 4A (Tc) 70W (Tc) Surface Mount DPAK

Drain-source Voltage (VGS = 0) : 600 V

Drain-gate Voltage (RGS = 20 kΩ) : 600 V

Gate- source Voltage : ± 30 V

Gate source ESD(HBM-C=100pF, R=1.5KΩ) : 3000 V

Peak Diode Recovery voltage slope : 4.5 V/ns

Operating Junction Temperature : -55 to 150 °C

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STP4NK60Z - STP4NK60ZFP
STB4NK60Z-STD4NK60Z-STD4NK60Z-1

N-CHANNEL 600V - 1.76Ω - 4A TO-220/FP/DPAK/IPAK/D²PAK
Zener-Protected SuperMESH^TMPower MOSFET

■ TYPICAL RDS(on) = 1.76 Ω
■ EXTREMELY HIGH dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ GATE CHARGE MINIMIZED
■ VERY LOW INTRINSIC CAPACITANCES
■ VERY GOOD MANUFACTURING REPEATIBILITY

DESCRIPTION
The SuperMESH^TM series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH^TM layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh^TM products.

APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC
■ LIGHTING

ABSOLUTE MAXIMUM RATINGS

Symbol	Parameter	Value			Unit
Symbol	Parameter	STP4NK60Z STB4NK60Z	STP4NK60ZFP	STD4NK60Z STD4NK60Z-1	Unit
V_DS	Drain-source Voltage (V_GS = 0)	600			V
V_DGR	Drain-gate Voltage (R_GS = 20 kΩ)	600			V
V_GS	Gate- source Voltage	± 30			V
I_D	Drain Current (continuous) at T_C = 25°C	4	4 (*)	4	A
I_D	Drain Current (continuous) at TC = 100°C	2.5	2.5 (*)	2.5	A
I_DM (l )	Drain Current (pulsed)	16	16 (*)	16	A
P_TOT	Total Dissipation at T_C = 25°C	70	25	70	W
	Derating Factor	0.56	0.2	0.56	W/°C
V_ESD(G-S)	Gate source ESD(HBM-C=100pF, R=1.5KΩ)	3000			V
dv/dt (1)	Peak Diode Recovery voltage slope	4.5			V/ns
V_ISO	Insulation Withstand Voltage (DC)	-	2500	-	V
Tj Tstg	Operating Junction Temperature Storage Temperature	-55 to 150 -55 to 150			°C °C

(l ) Pulse width limited by safe operating area
(1) I_SD ≤4A, di/dt ≤200A/µs, V_DD ≤ V_(BR)DSS, Tj ≤ T_JMAX.
(*) Limited only by maximum temperature allowed

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Product Tags:

power mosfet ic

multi emitter transistor

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