MLP1N06CLG Power Mosfet Transistor VOLTAGE CLAMPED CURRENT LIMITING MOSFET high power mosfet transistors rf power mosfe

Internally Clamped, Current Limited N–Channel Logic Level Power MOSFET

These SMARTDISCRETES devices feature current limiting for short circuit protection, an integral gate–to–source clamp for ESD protection and gate–to–drain clamp for over–voltage protection. No additional gate series resistance is required when interfacing to the output of a MCU, but a 40 kΩ gate pulldown resistor is recommended to avoid a floating gate condition.

The internal gate–to–source and gate–to–drain clamps allow the devices to be applied without use of external transient suppression components. The gate–to– source clamp protects the MOSFET input from electrostatic gate voltage stresses up to 2.0 kV. The gate–to–drain clamp protects the MOSFET drain from drain avalanche stresses that occur with inductive loads. This unique design provides voltage clamping that is essentially independent of operating temperature.

• Temperature Compensated Gate–to–Drain Clamp Limits Voltage Stress Applied to the Device and Protects the Load From Overvoltage

• Integrated ESD Diode Protection

• Controlled Switching Minimizes RFI

• Low Threshold Voltage Enables Interfacing Power Loads to Microprocessors

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MLP1N06CLG Power Mosfet Transistor VOLTAGE CLAMPED CURRENT LIMITING MOSFET high power mosfet transistors rf power mosfe Images