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Model Number : FDS6990A
Certification : new & original
Place of Origin : original factory
MOQ : 10pcs
Price : Negotiate
Payment Terms : T/T, Western Union, Paypal
Supply Ability : 7000pcs
Delivery Time : 1 day
Packaging Details : Please contact me for details
Description : Mosfet Array 30V 7.5A 900mW Surface Mount 8-SOIC
Drain-Source Voltage : 30 V
Gate-Source Voltage : ± 20 V
Operating Junction Temperature : –55 to +150 °C
Storage Temperature : –55 to +150 °C
Thermal Resistance, Junction-to-Ambient : 78 °C/W
Thermal Resistance, Junction-to-Case : 40 °C/W
FDS6990A Power Mosfet Transistor Dual N Channel Logic PowerTrench MOSFET
General Description
These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
Features
· 7.5 A, 30 V. RDS(ON) = 18 mW @ VGS = 10 V
RDS(ON) = 23 mW @ VGS = 4.5 V
· Fast switching speed
· Low gate charge
· High performance trench technology for extremely low RDS(ON)
· High power and current handling capability
Absolute Maximum Ratings TA=25℃ unless otherwise noted
Symbol | Parameter | Ratings | Units |
VDSS | Drain-Source Voltage | 30 | V |
VGSS | Gate-Source Voltage | ± 20 | V |
ID |
Drain Current – Continuous (Note 1a) – Pulsed |
7.5 | A |
20 | |||
PD |
Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) |
1.6 | W |
1.0 | |||
0.9 | |||
TJ, TSTG | Operating and Storage Junction Temperature Range | –55 to +150 | ℃ |
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FDS6990A Power Mosfet Transistor Dual N Channel Logic PowerTrench MOSFET Images |