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FDS6990A Power Mosfet Transistor Dual N Channel Logic PowerTrench MOSFET

ChongMing Group (HK) Int'l Co., Ltd
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FDS6990A Power Mosfet Transistor Dual N Channel Logic PowerTrench MOSFET

Model Number : FDS6990A

Certification : new & original

Place of Origin : original factory

MOQ : 10pcs

Price : Negotiate

Payment Terms : T/T, Western Union, Paypal

Supply Ability : 7000pcs

Delivery Time : 1 day

Packaging Details : Please contact me for details

Description : Mosfet Array 30V 7.5A 900mW Surface Mount 8-SOIC

Drain-Source Voltage : 30 V

Gate-Source Voltage : ± 20 V

Operating Junction Temperature : –55 to +150 °C

Storage Temperature : –55 to +150 °C

Thermal Resistance, Junction-to-Ambient : 78 °C/W

Thermal Resistance, Junction-to-Case : 40 °C/W

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FDS6990A Power Mosfet Transistor Dual N Channel Logic PowerTrench MOSFET

General Description

These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

Features

· 7.5 A, 30 V. RDS(ON) = 18 mW @ VGS = 10 V

RDS(ON) = 23 mW @ VGS = 4.5 V

· Fast switching speed

· Low gate charge

· High performance trench technology for extremely low RDS(ON)

· High power and current handling capability

Absolute Maximum Ratings TA=25℃ unless otherwise noted

Symbol Parameter Ratings Units
VDSS Drain-Source Voltage 30 V
VGSS Gate-Source Voltage ± 20 V
ID

Drain Current – Continuous (Note 1a)

– Pulsed

7.5 A
20
PD

Power Dissipation for Single Operation (Note 1a)

(Note 1b)

(Note 1c)

1.6 W
1.0
0.9
TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150

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Product Tags:

power mosfet ic

      

multi emitter transistor

      
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