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STW34NM60ND Power Mosfet Transistor Integrated Circuit Chip Program Memory

ChongMing Group (HK) Int'l Co., Ltd
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STW34NM60ND Power Mosfet Transistor Integrated Circuit Chip Program Memory

Brand Name : ST

Model Number : STW34NM60ND

Certification : Original Factory Pack

Place of Origin : CHINA

MOQ : 10pcs

Price : Negotiation

Payment Terms : T/T, Western Union,PayPal

Supply Ability : 74100PCS

Delivery Time : 1 Day

Packaging Details : TUBE

Description : MOSFET N-CH 600V 29A TO247

Temperature Range : –65°C to +175°C

Payment Term : T/T, Paypal, Western Union

Voltage : 14V

Current : 7A

Package : TO-220

Factory Package : TUBE

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N-channel 600 V, 0.097 Ohm typ., 29 A FDmesh II Power MOSFET

(with fast diode) in D2PAK, TO-220FP, TO-220 and TO-247

Features

Order codes VDSS @TJ max. RDS(on) max. ID

STB34NM60ND

STF34NM60ND

STP34NM60ND

STW34NM60ND

650V 0.110 Ω 29A

■ The world’s best RDS(on) in TO-220 amongst the fast recovery diode devices

■ 100% avalanche tested

■ Low input capacitance and gate charge

■ Low gate input resistance

■ Extremely high dv/dt and avalanche capabilities

DESCRIPTION

These FDmesh™ II Power MOSFETs with intrinsic fast-recovery body diode are produced using the second generation of MDmesh™ technology. Utilizing a new strip-layout vertical structure, these revolutionary devices feature extremely low on-resistance and superior switching performance. They are ideal for bridge topologies and ZVS phase-shift converters

ABSOLUTE MAXIMUM RATINGS(1)
IF(AV) 12 A
VRRM 600 V
IRM (typ) 7 A
Tj 175°C
VF (typ) 1.4 V
trr (max) 25 ns


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RES RC1206FR-071R2L 500000 YAGEO 16+ SMD1206
RES RL1206FR-070R68L 1000000 YAGEO 16+ SMD1206
RES RC0402FR-0722KL 3000000 YAGEO 16+ SMD0402
RES RC0402FR-0756RL 2000000 YAGEO 16+ SMD0402
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Product Tags:

power mosfet ic

      

multi emitter transistor

      
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