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MPSA42 Power Mosfet Transistor Low current NPN high voltage transistors

ChongMing Group (HK) Int'l Co., Ltd
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MPSA42 Power Mosfet Transistor Low current NPN high voltage transistors

Model Number : MPSA42

Certification : new & original

Place of Origin : original factory

MOQ : 20pcs

Price : Negotiate

Payment Terms : T/T, Western Union, Paypal

Supply Ability : 20000pcs

Delivery Time : 1 day

Packaging Details : Please contact me for details

Description : Bipolar (BJT) Transistor NPN 300 V 500 mA 50MHz 625 mW Through Hole TO-92-3

collector-base voltage : 300 V

collector-emitter voltage : 300 V

emitter-base voltage : 6 V

collector current (DC) : 100 mA

peak collector current : 200 mA

junction temperature : 150 °C

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MPSA42; MPSA43

NPN high-voltage transistors

FEATURES

• Low current (max. 100 mA)

• High voltage (max. 300 V).

APPLICATIONS

• Video

• Telephony

• Professional communication equipment.

DESCRIPTION

NPN high-voltage transistor in a TO-92; SOT54 plastic package. PNP complement: MPSA92.

PINNING

PIN DESCRIPTION
1 collector
2 base
3 emitter

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VCBO

collector-base voltage

MPSA42

MPSA43

open emitter

300

200

V

V

VCEO

collector-emitter voltage

MPSA42

MPSA43

open base

300

200

V

V

VEBO emitter-base voltage open collector 6 V
IC collector current (DC) 100 mA
ICM peak collector current 200 mA
IBM peak base current 100 mA
Ptot total power dissipation Tamb ≤ 25 °C 500 mW
Tstg storage temperature −65 +150 °C
Tj junction temperature 150 °C
Tamb ambient temperature −65 +150 °C

PACKAGE OUTLINE

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Product Tags:

multi emitter transistor

      

silicon power transistors

      
China MPSA42 Power Mosfet Transistor Low current NPN high voltage transistors wholesale

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