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IRLL024NTRPBF Power Mosfet Transistor HEXFET® Power MOSFET Fast Switching

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IRLL024NTRPBF Power Mosfet Transistor HEXFET® Power MOSFET Fast Switching

Model Number : IRLL024NTRPBF

Certification : new & original

Place of Origin : original factory

MOQ : 10pcs

Price : Negotiate

Payment Terms : T/T, Western Union, Paypal

Supply Ability : 10000pcs

Delivery Time : 1 day

Packaging Details : Please contact me for details

Description : MOSFET N-CH 55V 3.1A SOT223

Pulsed Drain Current : 12 A

Linear Derating Factor : 8.3 mW/°C

Gate-to-Source Voltage : ±16 V

Single Pulse Avalanche Energy : 120 mJ

Avalanche Current : 3.1 A

Junction and Storage Temperature : -55 to + 150 °C

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IRLL024NPbF HEXFET® Power MOSFET

Surface Mount
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
Fast Switching
Fully Avalanche Rated
Lead-Free

Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The SOT-223 package is designed for surface-mount using vapor phase, infra red, or wave soldering techniques. Its unique package design allows for easy automatic pickand-place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking. Power dissipation of 1.0W is possible in a typical surface mount application.

Absolute Maximum Ratings

	Parameter	Max.	Units
I_D @ T_A = 25°C	Continuous Drain Current, V_GS @ 10V**	4.4	A
I_D @ T_A = 25°C	Continuous Drain Current, V_GS @ 10V*	3.1	A
I_D @ T_A = 70°C	Continuous Drain Current, V_GS @ 10V*	2.5	A
I_DM	Pulsed Drain Current	12	A
P_D @T_A = 25°C	Power Dissipation (PCB Mount)**	2.1	W
P_D @T_A = 25°C	Power Dissipation (PCB Mount)*	1.0	W
	Linear Derating Factor (PCB Mount)*	8.3	mW/°C
V_GS	Gate-to-Source Voltage	± 16	V
E_AS	Single Pulse Avalanche Energy	120	mJ
I_AR	Avalanche Current	3.1	A
E_AR	Repetitive Avalanche Energy*	0.1	mJ
dv/dt	Peak Diode Recovery dv/dt	5.0	V/ns
T_J, T_STG	Junction and Storage Temperature Range	-55 to + 150	°C

* When mounted on FR-4 board using minimum recommended footprint.

** When mounted on 1 inch square copper board, for comparison with other SMD devices.

Stock Offer (Hot Sell)

Part No.

Quantity

Brand

D/C

Package

SS441A	9320	HONEYWELL	13+	TO-92
SS443A	28632	HONEYWELL	16+	TO-92
SS451A	3482	HONEYWELL	16+	TO-92
SS461C	6348	HONEYWELL	16+	TO-92
SS49E	13492	HONEYWELL	16+	TO-92
TP0606N3-G	11068	MICROCHIP	16+	TO-92
VN0104N3-G	11252	MICROCHIP	14+	TO-92
VN2410L-G	11436	MICROCHIP	13+	TO-92
TL431CLPR	55500	ON	10+	TO-92
TL431CLPRPG	17618	ON	10+	TO-92
S1102EUA-T	11876	SEC	16+	TO-92
STBV32-AP	27500	ST	16+	TO-92
STX83003	16232	ST	05+	TO-92
TL1431IZ	17276	ST	10+	TO-92
TL431ACZ	31500	ST	16+	TO-92
TL750L05CLP	7696	ST	10+	TO-92
PXT2222A	15674		16+	TO-89
STRX6757	2324	SANKEN	16+	TO3P-7
STRX6769	1421	SANKEN	16+	TO3P-7
STR30130	13928	SK	16+	TO3P-5
STD03P/STD03N	1000	SANKEN	14+	TO-3P-4
SSH22N50A	12510	FSC	13+	TO-3P
TIP35C	18012	KEC	16+	TO-3P
S30D45C	2940	MOSPEC	16+	TO-3P
SSH40N20	17268	SEC	16+	TO-3P
SGL160N60UFD	1439	FAIRCHILD	14+	TO-264
SPX29152T5-L	7756	EXAR	06+	TO-263-5
SP1086V1-L-3-3/TR	7516	SIPEX/EXA	10+	TO-263-3L
LT1963E#PBF	1652	LINEAR	15+	TO-263/5
14CL40	24324	FAIRCHILD	14+	TO-263

Product Tags:

multi emitter transistor

silicon power transistors

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