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HUF75645P3 power mosfet module N-Channel , UltraFET Power MOSFETs

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ChongMing Group (HK) Int'l Co., Ltd

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HUF75645P3 power mosfet module N-Channel , UltraFET Power MOSFETs

Model Number : HUF75645P3

Certification : new & original

Place of Origin : original factory

MOQ : 20pcs

Price : Negotiate

Payment Terms : T/T, Western Union, Paypal

Supply Ability : 9000pcs

Delivery Time : 1 day

Packaging Details : Please contact me for details

Description : N-Channel 100 V 75A (Tc) 310W (Tc) Through Hole TO-220-3

Drain to Source Voltage : 100 V

Drain to Gate Voltage : 100 V

Gate to Source Voltage : ±20 V

Power Dissipation : 310 W

Operating and Storage Temperature : -55 to 175 ℃

Package : TO-220AB

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HUF75645P3, HUF75645S3S

75A, 100V, 0.014 Ohm, N-Channel, UltraFET Power MOSFETs

Features

• Ultra Low On-Resistance

- rDS(ON) = 0.014Ω, VGS = 10V

• Simulation Models

- Temperature Compensated PSPICE® and SABER© Electrical Models

- Spice and Saber Thermal Impedance Models

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

Absolute Maximum Ratings T_C = 25℃, Unless Otherwise Specified

PARAMETER	SYMBOL	HUF75645P3, HUF75645S3S	UNITS
Drain to Source Voltage (Note 1)	V_DSS	100	V
Drain to Gate Voltage (R_GS = 20kΩ) (Note 1)	V_DGR	100	V
Gate to Source Voltage	V_GS	±20	V
Drain Current Continuous (T_C= 25℃, V_GS = 10V) (Figure 2) Continuous (T_C= 100℃, V_GS = 10V) (Figure 2)	I_D I_D	75 65	A A
Power Dissipation Derate Above 25℃	P_D	310 2.07	W W/℃
Operating and Storage Temperature	T_J, T_STG	-55 to 175	℃
Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s Package Body for 10s, See Techbrief TB334	T_L T_pkg	300 260	℃ ℃

NOTES: 1. TJ = 25℃ to 150℃.

Stock Offer (Hot Sell)

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Product Tags:

power mosfet ic

silicon power transistors

China HUF75645P3 power mosfet module N-Channel , UltraFET Power MOSFETs wholesale

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