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IRF7311TRPBF Electronic IC Chips Dual N Channel MOSFET HEXFET Power MOSFET

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IRF7311TRPBF Electronic IC Chips Dual N Channel MOSFET HEXFET Power MOSFET

Model Number : IRF7311TRPBF

Certification : new & original

Place of Origin : original factory

MOQ : 10pcs

Price : Negotiate

Payment Terms : T/T, Western Union, Paypal

Supply Ability : 7600pcs

Delivery Time : 1 day

Packaging Details : Please contact me for details

Description : Mosfet Array 20V 6.6A 2W Surface Mount 8-SO

Drain-Source Voltage : 20 V

Gate-Source Voltage : ±12 V

Pulsed Drain Current : 26 A

Continuous Source Current : 2.5 A

Single Pulse Avalanche Energy : 100 mJ

Avalanche Current : 4.1 A

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IRF7311

HEXFET® Power MOSFET

Generation V Technology
Ultra Low On-Resistance
Dual N-Channel MOSFET
Surface Mount
Fully Avalanche Rated

Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques.

Absolute Maximum Ratings ( T_A = 25°C Unless Otherwise Noted)

		Symbol	Maximum	Units
Drain-Source Voltage		V_DS	20	V
Gate-Source Voltage		V_GS	±12	V
Continuous Drain Current ¹	T_A = 25°C	I_D	6.6	A
Continuous Drain Current ¹	T_A = 70°C	I_D	5.3	A
Pulsed Drain Current		I_DM	26	A
Continuous Source Current (Diode Conduction)		I_S	2.5	A
Maximum Power Dissipation ¹	T_A = 25°C	P_D	2.0	W
Maximum Power Dissipation ¹	T_A = 70°C	P_D	1.3	W
Single Pulse Avalanche Energy ²		E_AS	100	mJ
Avalanche Current		I_AR	4.1	A
Repetitive Avalanche Energy		E_AR	0.20	mJ
Peak Diode Recovery dv/dt ³		dv/dt	5.0	V/ ns
Junction and Storage Temperature Range		T_J, T_STG	-55 to + 150	°C

Notes:

1. Surface mounted on 1 in square Cu board

2. Starting T_J = 25°C, L = 12mH R_G = 25Ω, I_AS = 4.1A.

3. I_SD ≤ 4.1A, di/dt ≤ 92A/µs, V_DD ≤ V_(BR)DSS, T_J≤ 150°C

Stock Offer (Hot Sell)

Part No.

Quantity

Brand

D/C

Package

IRF3707PBF	6217	IR	11+	TO-220
IRF5210PBF	2546	IR	15+	TO-220
IRF5800TRPBF	54000	IR	16+	TSOP-6
IRF6218PBF	8426	IR	06+	TO-220AB
IRF640NPBF	5610	IR	15+	TO-220
IRF640NSTRLPBF	4905	IR	16+	TO-263
IRF6638TRPBF	4492	IR	13+	SMD
IRF7303TRPBF	15463	IR	14+	SOP-8
IRF7328TRPBF	6288	IR	13+	SOP-8
IRF740B	49000	FSC	16+	TO-220
IRF740PBF	11487	IR	16+	TO-220
IRF7416TRPBF	23190	IR	16+	SOP-8
IRF7494TRPBF	9525	IR	14+	SOP-8
IRF7907TRPBF	12836	IR	13+	SOP-8
IRF8010PBF	17656	IR	16+	TO-220
IRF840PBF	14327	VISHAY	16+	TO-220
IRF8788TRPBF	21214	IR	12+	SOP-8
IRF9530NPBF	5539	IR	16+	TO-220
IRF9620PBF	3435	VISHAY	13+	TO-220
IRF9Z24N	9496	IR	16+	TO-220
IRFB3004PBF	8497	IR	09+	TO-220
IRFB31N20D	6973	IR	14+	TO-220
IRFB3207ZPBF	16234	IR	15+	TO-220
IRFB3306PBF	7959	IR	13+	TO-220
IRFB4227PBF	14319	IR	16+	TO-220
IRFB4310PBF	7645	IR	16+	TO-220
IRFB4332PBF	5199	IR	16+	TO-220
IRFB4332PBF	4735	IR	16+	TO-220
IRFB52N15DPBF	7716	IR	15+	TO-220
IRFI4019HG-117P	4847	IR	14+	TO-220-5

Product Tags:

electronic integrated circuit

linear integrated circuits

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