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BTA40-600B complementary silicon power transistors Mosfet Power Module 40A TRIACs

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BTA40-600B complementary silicon power transistors Mosfet Power Module 40A TRIACs

Model Number : BTA40-600B

Certification : new & original

Place of Origin : original factory

MOQ : 10pcs

Price : Negotiate

Payment Terms : T/T, Western Union, Paypal

Supply Ability : 7600pcs

Delivery Time : 1 day

Packaging Details : Please contact me for details

Description : TRIAC Standard 600 V 40 A Chassis Mount RD91

Storage junction temperature range : - 40 to + 150°C

Operating junction temperature range : - 40 to + 125°C

Average gate power dissipation : 1 W

Peak gate current : 8 A

Threshold voltage : 0.85 V

Dynamic resistance : 10 mΩ

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BTA40, BTA41 and BTB41 Series
40A TRIACS

Main Features

Symbol	Value	Unit
I_T(RMS)	40	A
V_DRM/V_RRM	600 and 800	V
I_{GT (Q1)}	50	mA

DESCRIPTION
Available in high power packages, the BTA/ BTB40-41 series is suitable for general purpose AC switching. They can be used as an ON/OFF function in applications such as static relays, heating regulation, induction motor starting circuits... or for phase control operation in light dimmers, motor speed controllers, ...
Thanks to their clip assembly technique, they provide a superior performance in surge current handling capabilities.
By using an internal ceramic pad, the BTA series provides voltage insulated tab (rated at 2500V_RMS) complying with UL standards (File ref.: E81734).

Absolute Maximum Ratings

Symbol	Parameter			Value	Unit
I_T(RMS)	RMS on-state current (full sine wave)	RD91 / TOP3	Tc = 95°C	40	A
I_T(RMS)	RMS on-state current (full sine wave)	TOP Ins.	Tc = 80°C	40	A
I_TSM	Non repetitive surge peak on-state current (full cycle, Tj initial = 25°C)	F = 50 Hz	t = 20 ms	400	A
I_TSM		F = 60 Hz	t = 16.7 ms	420	A
I² t	I² t Value for fusing	t_p= 10 ms		880	A² s
dI/dt	Critical rate of rise of on-state current I_G = 2 x I_GT , tr ≤ 100 ns	F = 120 Hz	Tj = 125°C	50	A/µs
V_DSM/V_RSM	Non repetitive surge peak off-state voltage	t_p = 10 ms	Tj = 25°C	V_DSM/V_RSM + 100	V
I_GM	Peak gate current	t_p = 20 µs	Tj = 125°C	8	A
P_G(AV)	Average gate power dissipation		Tj = 125°C	1	W
Tstg Tj	Storage junction temperature range Operating junction temperature range			- 40 to + 150 - 40 to + 125	°C

TOP3 (Insulated and non insulated) Package Mechanical Data

RD91 Package Mechanical Data

Stock Offer (Hot Sell)

Part NO.

Q'ty

MFG

D/C

Package

X9C104PIZ	7680	INTERSIL	15+	DIP-8
PC354NJ0000F	10000	SHARP	16+	SOP
X5043P	3000	INTERSIL	13+	DIP-8
LMC7660IM	3224	NSC	13+	SOP-8
MID400S	6796	FAIRCHILD	12+	SOP-8
MAX3378EEUD+T	12200	MAXIM	16+	TSSOP
NTR4101PT1G	40000	ON	16+	SOT-23
NCP1207APG	10880	ON	13+	DIP
MOC3163SM	5609	FSC	12+	SOP
PIC32MX460F512L-80I/PT	900	MICROCHIP	14+	TQFP-64
LM4871MX	4783	NSC	15+	SOP-8
L298HN	2399	ST	14+	ZIP
NDS8434A	10000	FAIRCHILD	16+	SOP-8
MC34166TVG	3478	ON	16+	TO-220
MBRF20100CTG	10000	ON	16+	TO-220
LT3591EDDB#TRMPBF	13514	LINEAR	14+	DFN
LM318MX	2000	NSC	15+	SOP-8
NCP1117ST50T3G	10000	ON	16+	SOT-223
MC33204DR2G	5938	ON	16+	SOP
AT24C02B-PU	2200	ATMEL	14+	DIP-8
LTC1665CGN#PBF	5890	LINEAR	16+	SSOP

Product Tags:

thyristor diode module

low voltage power mosfet

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