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CSD17313Q2 Mosfet Power Transistor MOSFET 30V N Channel NexFET Power MOSFET

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CSD17313Q2 Mosfet Power Transistor MOSFET 30V N Channel NexFET Power MOSFET

Brand Name : Ti

Model Number : CSD17313Q2

MOQ : Contact us

Price : Contact us

Payment Terms : Paypal, Western Union, TT

Supply Ability : 50000 Pieces per Day

Delivery Time : The goods will be shipped within 3 days once received fund

Packaging Details : SON6

Description : MOSFET N-CH 30V 5A 6WSON

Id - Continuous Drain Current : 5 A

Rds On - Drain-Source Resistance : 30 mOhms

Vgs - Gate-Source Voltage : 8 V

Qg - Gate Charge : 2.1 nC

Minimum Operating Temperature : - 55 C

Maximum Operating Temperature : + 150 C

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CSD17313Q2 Mosfet Power Transistor MOSFET 30V N Channel NexFET Power MOSFET

1 Features

Optimized for 5-V Gate Drive
Ultra-Low Qg and Qgd
Low Thermal Resistance
Pb-Free
RoHS Compliant
Halogen-Free
SON 2-mm × 2-mm Plastic Package

2 Applications

DC-DC Converters
Battery and Load Management Applications

3 Description

This 30-V, 24-mΩ, 2-mm x 2-mm SON NexFETTM power MOSFET is designed to minimize losses in power conversion applications and optimized for 5-V gate drive applications. The 2-mm × 2-mm SON offers excellent thermal performance for the size of the package.

Product Summary

(1) For all available packages, see the orderable addendum at the end of the data sheet.

TA = 25°C		TYPICAL VALUE		UNIT
VDS	Drain-to-Source Voltage	30		V
Qg	Gate Charge Total (4.5 V)	2.1		nC
Qgd	Gate Charge Gate-to-Drain	0.4		nC
RDS(on)	Drain-to-Source On Resistance	VGS = 3 V	31	mΩ
		VGS = 4.5 V	26	mΩ
		VGS = 8 V	24	mΩ
VGS(th)	Threshold Voltage	1.3		V

Ordering Information

PART NUMBER	QTY	MEDIA	PACKAGE	SHIP
CSD17313Q2	3000	13-Inch Reel	SON 2-mm × 2-mm Plastic Package	Tape and Reel
CSD17313Q2T	250	7-Inch Reel	SON 2-mm × 2-mm Plastic Package	Tape and Reel

Absolute Maximum Ratings

TA = 25°C		VALUE	UNIT
VDS	Drain-to-Source Voltage	30	V
VGS	Gate-to-Source Voltage	+10 / –8	V
ID	Continuous Drain Current (package limited)	5	A
	Continuous Drain Current (silicon limited), TC = 25°C	19
	Continuous Drain Current(1)	7.3
IDM	Pulsed Drain Current, TA = 25°C(2)	57	A
PD	Power Dissipation(1)	2.4	W
PD	Power Dissipation, TC = 25°C	17	W
TJ, TSTG	Operating Junction and Storage Temperature Range	–55 to 150	°C
EAS	Avalanche Energy, Single Pulse, ID =19A,L=0.1mH,RG =25Ω	18	mJ

Product Tags:

mosfet motor control circuit

n channel mos field effect transistor

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