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CSD17308Q3 CSD17308Q3T Ultra Low Qg Mosfet Motor Driver Circuit NCh NexFET Pwr Low Thermal Resistance

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ChongMing Group (HK) Int'l Co., Ltd

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CSD17308Q3 CSD17308Q3T Ultra Low Qg Mosfet Motor Driver Circuit NCh NexFET Pwr Low Thermal Resistance

Brand Name : Ti

Model Number : CSD17308Q3

MOQ : Contact us

Price : Contact us

Payment Terms : Paypal, Western Union, TT

Supply Ability : 50000 Pieces per Day

Delivery Time : The goods will be shipped within 3 days once received fund

Packaging Details : SON8

Channel Mode : Enhancement

Configuration : Single

Minimum Operating Temperature : - 55 C

Maximum Operating Temperature : + 150 C

CSD17308Q3 : 3.9 nC

Vgs - Gate-Source Voltage : 8 V

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CSD17308Q3 CSD17308Q3T Mosfet Power Transistor MOSFET 30V NCh NexFET Pwr MOSFET

1 Features

Optimized for 5-V Gate Drive
Ultra-Low Qg and Qgd
Low Thermal Resistance
Avalanche Rated
Pb Free Terminal Plating
RoHS Compliant
Halogen Free
VSON 3.3 mm × 3.3 mm Plastic Package

2 Applications

Notebook Point of Load
Point-of-Load Synchronous Buck in Networking, Telecom, and Computing Systems

3 Description

This 30-V, 8.2-mΩ, 3.3 mm × 3.3 mm VSON NexFETTM power MOSFET is designed to minimize losses in power conversion applications and optimized for 5-V gate drive applications.

Product Summary

TA = 25°C		VALUE		UNIT
VDS	Drain-to-source voltage	30		V
Qg	Gate charge total (4.5 V)	3.9		nC
Qgd	Gate charge gate to drain	0.8		nC
RDS(on)	Drain-to-source on resistance	VGS = 3 V	12.5	mΩ
		VGS = 4.5 V	9.4	mΩ
		VGS = 8 V	8.2	mΩ
VGS(th)	Threshold voltage	1.3		V

Ordering Information

DEVICE	QTY	MEDIA	PACKAGE	SHIP
CSD17308Q3	2500	13-Inch Reel	SON 3.3 mm × 3.3 mm Plastic Package	Tape and Reel

Absolute Maximum Ratings

TA = 25°C unless otherwise stated		VALUE	UNIT
VDS	Drain-to-source voltage	30	V
VGS	Gate-to-source voltage	+10 / –8	V
ID	Continuous Drain Current (Package Limited)	50	A
	Continuous drain current, TC = 25°C	44
	Continuous drain current(1)	14
IDM	Pulsed drain current, TA = 25°C(2)	167	A
PD	Power dissipation(1)	2.7	W
PD	Power Dissipation, TC = 25°C	28	W
TJ, Tstg	Operating Junction and Storage Temperature Range	–55 to 150	°C
EAS	Avalanche energy, single pulse ID =36A,L=0.1mH,RG =25Ω	65	mJ

Product Tags:

p channel mosfet driver circuit

mosfet motor control circuit

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