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FDMS3662 Mosfet Driver Circuit Using Transistor 100V N-Channel PowerTrench

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ChongMing Group (HK) Int'l Co., Ltd

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FDMS3662 Mosfet Driver Circuit Using Transistor 100V N-Channel PowerTrench

Brand Name : Ti

Model Number : FDMS3662

MOQ : Contact us

Price : Contact us

Payment Terms : Paypal, Western Union, TT

Supply Ability : 50000 Pieces per Day

Delivery Time : The goods will be shipped within 3 days once received fund

Packaging Details : QFN

Description : N-Channel 100 V 8.9A (Ta), 49A (Tc) 2.5W (Ta), 104W (Tc) Surface Mount 8-PQFN (5x6)

Unit Weight : 0.002402 oz

Product Type : MOSFET

Minimum Operating Temperature : - 55 C

Maximum Operating Temperature : + 155 C

Rds On - Drain-Source Resistance : 14.8 mOhms

Vgs - Gate-Source Voltage : 20 V

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FDMS3662 Mosfet Power Transistor MOSFET 100V N-Channel PowerTrench

Features

Max rDS(on) = 14.8mΩ at VGS = 10V, ID = 8.9A
Advanced Package and Silicon combination for low rDS(on)
MSL1 robust package design
100% UIL Tested
RoHS Compliant

General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

Application

DC - DC Conversion

Product Tags:

p channel mosfet driver circuit

n channel mos field effect transistor

FDMS3662 Mosfet Driver Circuit Using Transistor 100V N-Channel PowerTrench Images

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