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CSD18534Q5A Logic Level Mosfet Power Transistor MOSFET 60V N-Ch NexFET Pwr MOSFET

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ChongMing Group (HK) Int'l Co., Ltd

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Brand Name : Ti

Model Number : CSD18534Q5A

MOQ : Contact us

Price : Contact us

Payment Terms : Paypal, Western Union, TT

Supply Ability : 50000 Pieces per Day

Delivery Time : The goods will be shipped within 3 days once received fund

Packaging Details : VSONP8

Description : MOSFET N-CH 60V 13A/50A 8VSON

Channel Mode : Enhancement

Configuration : Single

Minimum Operating Temperature : - 55 C

Maximum Operating Temperature : + 150 C

Packaging : Cut Tape

Brand : Texas Instruments

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CSD18534Q5A Mosfet Power Transistor MOSFET 60V N-Ch NexFET Pwr MOSFET

1 Features

2 Applications

3 Description

This 7.8 mΩ, 60 V, SON 5 × 6 mm NexFETTM power MOSFET is designed to minimize losses in power conversion applications.

Product Summary

TA = 25°C		TYPICAL VALUE		UNIT
VDS	Drain-to-source voltage	60		V
Qg	Gate charge total (10 V)	17		nC
Qgd	Gate charge gate-to-drain	3.5		nC
RDS(on)	Drain-to-source on-resistance	VGS = 4.5 V	9.9	mΩ
RDS(on)	Drain-to-source on-resistance	VGS =10V	7.8	mΩ
VGS(th)	Threshold voltage	1.9		V

Ordering Information

Absolute Maximum Ratings

TA = 25°C		VALUE	UNIT
VDS	Drain-to-source voltage	60	V
VGS	Gate-to-source voltage	±20	V
ID	Continuous drain current (package limited)	50	A
	Continuous drain current (silicon limited), TC = 25°C	69
	Continuous drain current, TA = 25°C(1)	13
IDM	Pulsed drain current, TA = 25°C(2)	229	A
PD	Power dissipation(1)	3.1	W
PD	Power dissipation, TC = 25°C	77	W
TJ, Tstg	Operating junction, Storage temperature	–55 to 150	°C
EAS	Avalanche energy, single pulse ID =40A,L=0.1mH,RG =25Ω	80	mJ

Product Tags:

p channel mosfet driver circuit

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